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60 V, N-channel Trench MOSFET
Description
AI
N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006-3 (SOT883) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
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60 V, N-channel Trench MOSFET
60 V, N-channel Trench MOSFET
| Part | Package / Case | Mounting Type | FET Type | Qualification | Rds On (Max) | Operating Temperature (Min) | Operating Temperature (Max) | Grade | Package Name | Power Dissipation (Max) | Input Capacitance (Ciss) (Max) | Vgs (Max) | Drive Voltage (Min Rds On) | Drive Voltage (Max Rds On) | Gate Charge (Max) | Current - Continuous Drain (Id) (Ta) | Drain to Source Voltage (Vdss) | Technology | Vgs(th) (Max) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Nexperia USA Inc. | SC-101 SOT-883 | Surface Mount | N-Channel | AEC-Q101 | 3 Ohm | -55 °C | 150 °C | Automotive | SOT-883 | 3.1 W 710 mW | 9.2 pF | 20 V | 10 V | 5 V | 315 pC | 350 mA | 60 V | MOSFET (Metal Oxide) | 2.6 V |