IMBG65R015 Series
Manufacturer: INFINEON
Beta
⌘K
SILICON CARBIDE MOSFET, SINGLE, N CHANNEL, 115 A, 650 V, 0.0132 OHM, TO-263
| Part | Input Capacitance (Ciss) (Max) | FET Type | Vgs (Max) Positive | Vgs (Max) Negative | Current - Continuous Drain (Id) (Tc) | Drive Voltage (Min Rds On) | Drive Voltage (Max Rds On) | Package Leads | Package Name | Mounting Type | Drain to Source Voltage (Vdss) | Technology | Power Dissipation (Max) | Gate Charge (Max) | Vgs(th) (Max) | Operating Temperature (Min) | Operating Temperature (Max) | Rds On (Max) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 INFINEON | 2792 pF | N-Channel | 23 V | -7 V | 115 A | 20 V | 15 V | 7 Leads | D2PAK PG-TO263-7-12 | Surface Mount | 650 V | SiCFET (Silicon Carbide) | 416 W | 79 nC | 5.6 V | -55 °C | 175 °C | 18 mOhm |