SSM6G18NU Series
Bipolar Transistors, -20 V/-2 A P-ch MOS + SBD, SOT-1118(UDFN6)
Manufacturer: Toshiba Semiconductor and Storage
Catalog
Bipolar Transistors, -20 V/-2 A P-ch MOS + SBD, SOT-1118(UDFN6)
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Bipolar Transistors, -20 V/-2 A P-ch MOS + SBD, SOT-1118(UDFN6)
Bipolar Transistors, -20 V/-2 A P-ch MOS + SBD, SOT-1118(UDFN6)
Bipolar Transistors, -20 V/-2 A P-ch MOS + SBD, SOT-1118(UDFN6)
| Part | Operating Temperature | Power Dissipation (Max) | Drain to Source Voltage (Vdss) | Rds On (Max) | Input Capacitance (Ciss) (Max) | Mounting Type | Technology | Vgs(th) (Max) | FET Type | Gate Charge (Max) | Package Length | Package Name | Package Width | Current - Continuous Drain (Id) (Ta) | Package / Case | Drive Voltage (Min Rds On) | Drive Voltage (Max Rds On) | FET Feature | Vgs (Max) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Toshiba Semiconductor and Storage | 150 °C | 1 W | 20 V | 112 mOhm | 270 pF | Surface Mount | MOSFET (Metal Oxide) | 1 V | P-Channel | 4.6 nC | 2 mm | 6-µDFN | 2 mm | 2 A | 6-WDFN Exposed Pad | 4.5 V | 1.5 V | Schottky Diode (Isolated) | 8 V |