MOSFET 4N-CH 30V 0.83A 14DIP
| Part | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id [Max] | Current - Continuous Drain (Id) @ 25°C | Mounting Type | Drain to Source Voltage (Vdss) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Operating Temperature [Min] | Operating Temperature [Max] | Power - Max [Max] | Configuration | Supplier Device Package | Technology |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Vishay Siliconix VQ1001P-E3 | 1.75 Ohm | 2.5 V | 830 mA | Through Hole | 30 V | 110 pF | Logic Level Gate | -55 °C | 150 °C | 2 W | 4 N-Channel | 14-DIP | MOSFET (Metal Oxide) |