IXTH150 Series

DiscMSFT NCh HiPerFET-Q Class TO-247AD

Catalog

DiscMSFT NCh HiPerFET-Q Class TO-247AD

Part	Package Name	FET Type	Power Dissipation (Max)	Technology	Input Capacitance (Ciss) (Max)	Current - Continuous Drain (Id) (Tc)	Gate Charge (Max)	Package / Case	Mounting Type	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max)	Vgs (Max)	Drain to Source Voltage (Vdss)	Vgs(th) (Max)	Operating Temperature (Min)	Operating Temperature (Max)
LITTELFUSE IXTH150N15X4	TO-247	N-Channel	480 W	MOSFET (Metal Oxide)	5500 pF	150 A	105 nC	TO-247-3	Through Hole	10 V	7.2 mOhm	20 V	150 V	4.5 V	-55 °C	175 °C
LITTELFUSE IXTH150N15X4	TO-247	N-Channel	480 W	MOSFET (Metal Oxide)	5500 pF	150 A	105 nC	TO-247-3	Through Hole	10 V	7.2 mOhm	20 V	150 V	4.5 V	-55 °C	175 °C
LITTELFUSE IXTH150N17T	TO-247 (IXTH)	N-Channel	830 W	MOSFET (Metal Oxide)	9800 pF	150 A	155 nC	TO-247-3	Through Hole	10 V	12 mOhm	30 V	175 V	5 V	-55 °C	175 °C

Catalog

DiscMSFT NCh HiPerFET-Q Class TO-247AD

Description

These devices are developed using a charge compensation principle and proprietary process technology, resulting in Power MOSFETs with significantly reduced resistance RDS(on) and gate charge Qg. A low on-state resistance reduces the conduction losses; it also lowers the energy stored in the output capacitance, minimizing the switching losses. A low gate charge results in higher efficiency at light loads as well as lower gate drive requirements. In addition, these MOSFETs are avalanche rated and exhibit a superior dv/dt performance. Also due to the positive temperature coefficient of their on-state resistance, they can be operated in parallel to meet higher current requirements.