DMT6006SPS Series

60V N-Channel Enhancement Mode MOSFET

Catalog

60V N-Channel Enhancement Mode MOSFET

Part	Package / Case	Current - Continuous Drain (Id) @ 25°C	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	FET Type	Supplier Device Package	Vgs(th) (Max) @ Id	Power Dissipation (Max)	Technology	Mounting Type	Operating Temperature [Min]	Operating Temperature [Max]	Drain to Source Voltage (Vdss)	Rds On (Max) @ Id, Vgs
Diodes Inc DMT6006SPS-13	8-PowerTDFN	98 A	16.2 A	10 V	27.9 nC	20 V	N-Channel	PowerDI5060-8	4 V	2.45 W 89.3 W	MOSFET (Metal Oxide)	Surface Mount	-55 °C	150 °C	60 V	6.2 mOhm

Catalog

60V N-Channel Enhancement Mode MOSFET

Key Features

• 100% Unclamped Inductive Switching (UIS) Test in Production— Ensures More Reliable and Robust End Application

• High-Conversion Efficiency

• Low RDS(ON)—Minimizes On-State Losses

• Low Input Capacitance

• Fast Switching Speed

• Lead-Free Finish; RoHS Compliant (Notes 1 & 2)

• Halogen and Antimony Free. "Green" Device (Note 3)

• For automotive applications requiring specific change control (i.e. parts qualified to AEC-Q100/101/104/200, PPAP capable, and manufactured in IATF 16949 certified facilities), pleasecontact us oryour local Diodes representative.https://www.diodes.com/quality/product-definitions/

Description

This MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high-efficiency power-management applications.