IR MOSFET™ N-CHANNEL SMALL POWER ; SOT-23 PACKAGE; 250 MOHM;
| Part | Operating Temperature [Min] | Operating Temperature [Max] | Gate Charge (Qg) (Max) @ Vgs [custom] | Gate Charge (Qg) (Max) @ Vgs [Max] [custom] | Power Dissipation (Max) [Max] | Drive Voltage (Max Rds On, Min Rds On) [Min] | Drive Voltage (Max Rds On, Min Rds On) [Max] | Vgs (Max) | FET Type | Vgs(th) (Max) @ Id | Input Capacitance (Ciss) (Max) @ Vds [Max] | Supplier Device Package | Rds On (Max) @ Id, Vgs | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Technology | Package / Case | Mounting Type |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies | -55 °C | 150 °C | 4.5 V | 3.9 nC | 540 mW | 4.5 V | 2.7 V | 12 V | N-Channel | 700 mV | 110 pF | Micro3™/SOT-23 | 250 mOhm | 20 V | 1.2 A | MOSFET (Metal Oxide) | SC-59 SOT-23-3 TO-236-3 | Surface Mount |