MOSFET N-CH 650V 33A I2PAK
| Part | Gate Charge (Qg) (Max) @ Vgs [Max] | Power Dissipation (Max) [Max] | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Mounting Type | Supplier Device Package | Rds On (Max) @ Id, Vgs | Operating Temperature [Min] | Operating Temperature [Max] | FET Type | Technology | Drain to Source Voltage (Vdss) | Input Capacitance (Ciss) (Max) @ Vds | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
STMicroelectronics | 100 nC | 190 W | 10 V | 25 V | 5 V | 33 A | Through Hole | I2PAK | 79 mOhm | -55 °C | 150 °C | N-Channel | MOSFET (Metal Oxide) | 650 V | 4650 pF | I2PAK TO-262-3 Long Leads TO-262AA |