N-Channel Enhancement Mode MOSFET
N-Channel Enhancement Mode MOSFET
| Part | Technology | Power Dissipation (Max) [Max] | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) [Min] | Drive Voltage (Max Rds On, Min Rds On) [Max] | FET Type | Drain to Source Voltage (Vdss) | Mounting Type | Operating Temperature [Min] | Operating Temperature [Max] | Vgs (Max) | Vgs(th) (Max) @ Id | Rds On (Max) @ Id, Vgs | Package / Case | Gate Charge (Qg) (Max) @ Vgs | Supplier Device Package | Input Capacitance (Ciss) (Max) @ Vds |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Diodes Inc | MOSFET (Metal Oxide) | 900 mW | 6.2 A | 10 V | 2.5 V | N-Channel | 30 V | Surface Mount | -55 °C | 155 °C | 20 V | 1.8 V | 25 mOhm | SC-59 SOT-23-3 TO-236-3 | 18.4 nC | SOT-23-3 | 873 pF |
Diodes Inc | MOSFET (Metal Oxide) | 900 mW | 6.2 A | 10 V | 2.5 V | N-Channel | 30 V | Surface Mount | -55 °C | 150 °C | 20 V | 1.8 V | 25 mOhm | SC-59 SOT-23-3 TO-236-3 | 18.4 nC | SOT-23-3 | 873 pF |