APTM50 Series

500V/Single switch + series and parallel diode/Si MOSFET

Catalog

500V/Single switch + series and parallel diode/Si MOSFET

Part	Technology	FET Type	Drive Voltage (Max Rds On, Min Rds On)	Mounting Type	Vgs (Max)	Gate Charge (Max)	Rds On (Max)	Package Name	Operating Temperature (Min)	Operating Temperature (Max)	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) (Tc)	Vgs(th) (Max)	Package / Case	Input Capacitance (Ciss) (Max)	Power Dissipation (Max)	Current - Continuous Drain (Id)	Power - Max	Channel Count	Configuration - Features	Configuration
Microchip Technology APTM50SKM17G	MOSFET (Metal Oxide)	N-Channel	10 V	Chassis Mount	30 V	560 nC	20 mOhm	SP6	-40 °C	150 °C	500 V	180 A	5 V	SP6	28000 pF	1250 W
Microchip Technology APTM50AM17FG	MOSFET (Metal Oxide)			Chassis Mount		560 nC	20 mOhm	SP6	-40 °C	150 °C	500 V		5 V	SP6	28000 pF		180 A	1250 W	2	Half Bridge	N-Channel
Microchip Technology APTM50UM09FAG	MOSFET (Metal Oxide)	N-Channel	10 V	Chassis Mount	30 V		10 mOhm	SP6	-40 °C	150 °C	500 V	497 A	5 V	SP6	63300 pF	5000 W
Microchip Technology APTM50DDA10T3G	MOSFET (Metal Oxide)			Chassis Mount		96 nC	120 mOhm	SP3	-40 °C	150 °C	500 V		5 V	SP3	4367 pF		37 A	312 W	2	Dual	N-Channel
Microchip Technology APTM50DDAM65T3G	MOSFET (Metal Oxide)			Chassis Mount		140 nC	78 mOhm	SP3	-40 °C	150 °C	500 V		5 V	SP3	7000 pF		51 A	390 W	2	Dual	N-Channel
Microchip Technology APTM50DAM17G	MOSFET (Metal Oxide)	N-Channel	10 V	Chassis Mount	30 V	560 nC	20 mOhm	SP6	-40 °C	150 °C	500 V	180 A	5 V	SP6	28000 pF	1250 W
Microchip Technology APTM50HM65FT3G	MOSFET (Metal Oxide)			Chassis Mount		140 nC	78 mOhm	SP3	-40 °C	150 °C	500 V		5 V	SP3	7000 pF		51 A	390 W	4	Full Bridge	N-Channel
Microchip Technology APTM50AM19FG	MOSFET (Metal Oxide)			Chassis Mount		492 nC	22.5 mOhm	SP6	-40 °C	150 °C	500 V		5 V	SP6	22400 pF		163 A	1136 W	2	Half Bridge	N-Channel
Microchip Technology APTM50DAM19G	MOSFET (Metal Oxide)	N-Channel	10 V	Chassis Mount	30 V	492 nC	22.5 mOhm	SP6	-40 °C	150 °C	500 V	163 A	5 V	SP6	22400 pF	1136 W
Microchip Technology APTM50AM24SCG	Silicon Carbide (SiC)			Chassis Mount		434 nC	28 mOhm	SP6	-40 °C	150 °C	500 V		5 V	SP6	19600 pF		150 A 150 A	1250 W	2	Half Bridge	N-Channel

Catalog

500V/Single switch + series and parallel diode/Si MOSFET

Description

* FREDFETs * Low RDSon * Low input and Miller capacitance * Low gate charge * Fast intrinsic reverse diode * Avalanche energy rated * Very rugged * Kelvin source for easy drive * Low stray inductance * Outstanding performance at high frequency operation * Direct mounting to heatsink (isolated package) * Low junction to case thermal resistance * Internal thermistor for temperature monitoring (optional) * RoHS Compliant