STRONGIRFET™ N-CHANNEL POWER MOSFET ; I2PAK TO-262 PACKAGE; 1.2 MOHM;
| Part | Drain to Source Voltage (Vdss) | Package / Case | Mounting Type | Operating Temperature [Min] | Operating Temperature [Max] | Input Capacitance (Ciss) (Max) @ Vds | Gate Charge (Qg) (Max) @ Vgs | FET Type | Supplier Device Package | Vgs(th) (Max) @ Id | Vgs (Max) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Drive Voltage (Max Rds On, Min Rds On) | Power Dissipation (Max) [Max] | Technology |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies | 40 V | D2PAK (2 Leads + Tab) TO-263-3 TO-263AB | Surface Mount | -55 °C | 175 ░C | 14240 pF | 460 nC | N-Channel | D2PAK | 3.9 V | 20 V | 195 A | 1.2 mOhm | 6 V 10 V | 375 W | MOSFET (Metal Oxide) |
Infineon Technologies | 40 V | D2PAK (2 Leads + Tab) TO-263-3 TO-263AB | Surface Mount | -55 °C | 175 ░C | 14240 pF | 460 nC | N-Channel | D2PAK | 3.9 V | 20 V | 195 A | 1.2 mOhm | 6 V 10 V | 375 W | MOSFET (Metal Oxide) |