IRF9540 Series

Catalog

IR MOSFET™ P-CHANNEL MOSFET ; I2PAK TO-262 PACKAGE; 117 MOHM;

Part	Current - Continuous Drain (Id) @ 25°C	Supplier Device Package	Technology	Vgs(th) (Max) @ Id	Package / Case	Gate Charge (Qg) (Max) @ Vgs [Max]	Drive Voltage (Max Rds On, Min Rds On)	Operating Temperature [Min]	Operating Temperature [Max]	FET Type	Power Dissipation (Max)	Input Capacitance (Ciss) (Max) @ Vds [Max]	Vgs (Max)	Rds On (Max) @ Id, Vgs	Mounting Type	Drain to Source Voltage (Vdss)
Infineon Technologies IRF9540NLPBF	23 A	TO-262	MOSFET (Metal Oxide)	4 V	I2PAK TO-262-3 Long Leads TO-262AA	110 nC	10 V	-55 °C	150 °C	P-Channel	3.1 W 110 W	1450 pF	20 V	117 mOhm	Through Hole	100 V
Infineon Technologies IRF9540NSTRLPBF	23 A	D2PAK	MOSFET (Metal Oxide)	4 V	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	110 nC	10 V	-55 °C	150 °C	P-Channel	3.1 W 110 W	1450 pF	20 V	117 mOhm	Surface Mount	100 V
Infineon Technologies IRF9540NSTRRPBF	23 A	D2PAK	MOSFET (Metal Oxide)	4 V	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	110 nC	10 V	-55 °C	150 °C	P-Channel	3.1 W 110 W	1450 pF	20 V	117 mOhm	Surface Mount	100 V