
TC427 Series
Manufacturer: Microchip Technology
MOSFET DRIVER, -40 TO 85DEG C ROHS COMPLIANT: YES
| Part | Gate Type | Operating Temperature (Max) | Operating Temperature (Min) | Rise Time (Typ) | Fall Time (Typ) | Package Name | Mounting Type | Gate Channel | Number of Drivers | Voltage - Supply (Maximum) | Voltage - Supply (Minimum) | Channel Type | Package Length | Package Width | Logic Voltage - VIH | Logic Voltage - VIL | Current - Peak Output (Sink) | Current - Peak Output (Source) | Driven Configuration | Input Type |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Microchip Technology | MOSFET N-Channel P-Channel MOSFET | 85 °C | -40 °C | 30 ns | 30 ns | 8-SOIC | Surface Mount | N-Channel P-Channel | 2 | 18 V | 4.5 V | Independent | 0.154 in | 3.9 mm | 2.4 V | 0.8 V | 1.5 A | 1.5 A | Low-Side | Non-Inverting |
Microchip Technology | MOSFET N-Channel P-Channel MOSFET | 85 °C | -40 °C | 30 ns | 30 ns | 8-SOIC | Surface Mount | N-Channel P-Channel | 2 | 18 V | 4.5 V | Independent | 0.154 in | 3.9 mm | 2.4 V | 0.8 V | 1.5 A | 1.5 A | Low-Side | Non-Inverting |
Microchip Technology | MOSFET | 125 °C | -55 °C | 30 ns | 30 ns | 8-CDIP 8-CERDIP | Through Hole | N-Channel P-Channel | 2 | 18 V | 4.5 V | Independent | 0.3 in | 7.62 mm | 2.4 V | 0.8 V | 1.5 A | 1.5 A | Low-Side | Non-Inverting |
Microchip Technology | MOSFET N-Channel P-Channel MOSFET | 85 °C | -25 °C | 30 ns | 30 ns | 8-CDIP 8-CERDIP | Through Hole | N-Channel P-Channel | 2 | 18 V | 4.5 V | Independent | 0.3 in | 7.62 mm | 2.4 V | 0.8 V | 1.5 A | 1.5 A | Low-Side | Non-Inverting |
Microchip Technology | MOSFET N-Channel P-Channel MOSFET | 85 °C | -40 °C | 30 ns | 30 ns | 8-DIP 8-PDIP | Through Hole | N-Channel P-Channel | 2 | 18 V | 4.5 V | Independent | 0.3 in | 7.62 mm | 2.4 V | 0.8 V | 1.5 A | 1.5 A | Low-Side | Non-Inverting |
Microchip Technology | MOSFET N-Channel P-Channel MOSFET | 125 °C | -40 °C | 30 ns | 30 ns | 8-DIP 8-PDIP | Through Hole | N-Channel P-Channel | 2 | 18 V | 4.5 V | Independent | 0.3 in | 7.62 mm | 2.4 V | 0.8 V | 1.5 A | 1.5 A | Low-Side | Non-Inverting |
Microchip Technology | MOSFET N-Channel P-Channel MOSFET | 70 °C | 0 °C | 30 ns | 30 ns | 8-DIP 8-PDIP | Through Hole | N-Channel P-Channel | 2 | 18 V | 4.5 V | Independent | 0.3 in | 7.62 mm | 2.4 V | 0.8 V | 1.5 A | 1.5 A | Low-Side | Non-Inverting |
Microchip Technology | MOSFET N-Channel P-Channel MOSFET | 70 °C | 0 °C | 30 ns | 30 ns | 8-SOIC | Surface Mount | N-Channel P-Channel | 2 | 18 V | 4.5 V | Independent | 0.154 in | 3.9 mm | 2.4 V | 0.8 V | 1.5 A | 1.5 A | Low-Side | Non-Inverting |
Microchip Technology | MOSFET N-Channel P-Channel MOSFET | 70 °C | 0 °C | 30 ns | 30 ns | 8-SOIC | Surface Mount | N-Channel P-Channel | 2 | 18 V | 4.5 V | Independent | 0.154 in | 3.9 mm | 2.4 V | 0.8 V | 1.5 A | 1.5 A | Low-Side | Non-Inverting |
Microchip Technology | MOSFET N-Channel P-Channel MOSFET | 85 °C | -40 °C | 30 ns | 30 ns | 8-MSOP 8-TSSOP 8-MSOP | Surface Mount | N-Channel P-Channel | 2 | 18 V | 4.5 V | Independent | 0.118 in | 3 mm | 2.4 V | 0.8 V | 1.5 A | 1.5 A | Low-Side | Non-Inverting |