IC DRAM 4GBIT PAR 96FBGA
| Part | Memory Format | Access Time | Supplier Device Package | Clock Frequency | Technology | Package / Case | Voltage - Supply [Max] | Voltage - Supply [Min] | Memory Organization | Memory Interface | Mounting Type | Write Cycle Time - Word, Page | Operating Temperature [Max] | Operating Temperature [Min] | Memory Type | Memory Size | Supplier Device Package |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Etron Technology, Inc. EM6HE16EWXD-10IH | DRAM | 20 ns | 96-FBGA | 933 MHz | SDRAM - DDR3L | 96-TFBGA | 1.45 V | 1.283 V | 256 M | Parallel | Surface Mount | 15 ns | 95 °C | -40 °C | Volatile | 512 kb | |
Etron Technology, Inc. EM6HE16EWAKG-10IH | DRAM | 20 ns | 96-FBGA | 933 MHz | SDRAM - DDR3L | 96-TFBGA | 1.45 V | 1.283 V | 256 M | Parallel | Surface Mount | 15 ns | 95 °C | -40 °C | Volatile | 512 kb | 7.5, 13.5 |
Etron Technology, Inc. EM6HE16EWXD-10H | DRAM | 20 ns | 96-FBGA | 933 MHz | SDRAM - DDR3 | 96-TFBGA | 1.45 V | 1.283 V | 256 M | Parallel | Surface Mount | 15 ns | 95 °C | 0 °C | Volatile | 512 kb | |
Etron Technology, Inc. EM6HE16EWAKG-10H | DRAM | 20 ns | 96-FBGA | 933 MHz | SDRAM - DDR3L | 96-TFBGA | 1.45 V | 1.283 V | 256 M | Parallel | Surface Mount | 15 ns | 95 °C | 0 °C | Volatile | 512 kb | 7.5, 13.5 |