Catalog
N-Channel Enhancement Mode MOSFET
Key Features
• 0.6mm Profile – Ideal for Low Profile Applications
• PCB Footprint of 4mm2
• Low Gate Threshold Voltage
• Fast Switching Speed
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N-Channel Enhancement Mode MOSFET
N-Channel Enhancement Mode MOSFET
| Part | Technology | FET Type | Vgs (Max) | Mounting Type | Rds On (Max) @ Id, Vgs | Supplier Device Package | Drain to Source Voltage (Vdss) | Power Dissipation (Max) | Operating Temperature [Min] | Operating Temperature [Max] | Drive Voltage (Max Rds On, Min Rds On) | Current - Continuous Drain (Id) @ 25°C | Package / Case | Gate Charge (Qg) (Max) @ Vgs [Max] | Vgs(th) (Max) @ Id | Input Capacitance (Ciss) (Max) @ Vds | Gate Charge (Qg) (Max) @ Vgs | Package / Case [y] | Package / Case [x] | Configuration | Power - Max [Max] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Diodes Inc | MOSFET (Metal Oxide) | N-Channel | 8 V | Surface Mount | 24 mOhm | TSOT-23-6 | 20 V | 1.2 W | -55 °C | 150 °C | 2.5 V 4.5 V | 6.2 A | SOT-23-6 Thin TSOT-23-6 | 8.3 nC | 1.5 V | 856 pF | |||||
Diodes Inc | MOSFET (Metal Oxide) | N-Channel | 8 V | Surface Mount | 20 mOhm | 8-SO | 20 V | 1.56 W | -55 °C | 150 °C | 1.5 V 4.5 V | 7.3 A | 8-SOIC | 1.3 V | 1000 pF | 11.6 nC | 3.9 mm | 0.154 in | |||
Diodes Inc | MOSFET (Metal Oxide) | Surface Mount | 20.2 mOhm | U-DFN2030-6 (Type B) | 20 V | -55 °C | 150 °C | 7.5 A | 6-UFDFN Exposed Pad | 1 V | 887 pF | 18.4 nC | 2 N-Channel (Dual) Common Drain | 900 mW | |||||||
Diodes Inc | MOSFET (Metal Oxide) | N-Channel | 8 V | Surface Mount | 25 mOhm | U-DFN2020-6 (Type F) | 20 V | 660 mW | -55 °C | 150 °C | 1.5 V 4.5 V | 7.9 A | 6-UDFN Exposed Pad | 1 V | 907 pF | 18 nC |