DMTH61M8LPS Series

60V +175°C N-Channel Enhancement Mode MOSFET

Catalog

60V +175°C N-Channel Enhancement Mode MOSFET

Part	Power Dissipation (Max)	Vgs(th) (Max) @ Id	Rds On (Max) @ Id, Vgs	FET Type	Mounting Type	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	Operating Temperature [Min]	Operating Temperature [Max]	Supplier Device Package	Current - Continuous Drain (Id) @ 25°C	Technology	Drain to Source Voltage (Vdss)	Drive Voltage (Max Rds On, Min Rds On)	Package / Case	Gate Charge (Qg) (Max) @ Vgs
Diodes Inc DMTH61M8LPS-13	3.2 W 187.5 W	3 V	1.6 mOhm	N-Channel	Surface Mount	8320 pF	20 V	-55 °C	175 ░C	PowerDI5060-8	225 A	MOSFET (Metal Oxide)	60 V	4.5 V 10 V	8-PowerTDFN	115.5 nC

Catalog

60V +175°C N-Channel Enhancement Mode MOSFET

Key Features

• Rated to +175°C – Ideal for High Ambient TemperatureEnvironments

• 100% Unclamped Inductive Switching (UIS) Test in Production –

• Ensures More Reliable and Robust End Application

• High Conversion Efficiency

• Low RDS(ON) – Minimizes On State Losses

• Low Input Capacitance

• Fast Switching Speed

• Lead-Free Finish; RoHS Compliant

• Halogen and Antimony Free. "Green" Device

• For automotive applications requiring specific change control(i.e. parts qualified to AEC-Q100/101/200, PPAP capable, andmanufactured in IATF 16949 certified facilities), pleasecontact us or your local Diodes representative.https://www.diodes.com/quality/product-definitions/

Description

This MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high efficiency power management applications.