S4PJ Series
Manufacturer: Vishay General Semiconductor - Diodes Division
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DIODE GEN PURP 600V 4A TO277A
| Part | Current - Average Rectified (Io) | Voltage - DC Reverse (Vr) (Max) | Voltage - Forward (Vf) (Max) | Package Name | Technology | Reverse Recovery Time (trr) | Speed - Fast Recovery (Minimum) | Speed | Speed - Recovery Current | Speed - Recovery Time | Operating Temperature - Junction (Max) | Operating Temperature - Junction (Min) | Current - Reverse Leakage | Grade | Qualification | Capacitance | Package / Case | Mounting Type |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Vishay General Semiconductor - Diodes Division | 4 A | 600 V | 1.1 V | TO-277A (SMPC) | Standard | 2.5 µs | 200 mA 500 ns | Standard Recovery | 200 mA 200 mA | 500 ns | 150 °C | -55 °C | 10 µA | Automotive | AEC-Q101 | 30 pF | 3-PowerDFN TO-277 | Surface Mount |
 Vishay General Semiconductor - Diodes Division | 4 A | 600 V | 1.1 V | TO-277A (SMPC) | Standard | 2.5 µs | 200 mA 500 ns | Standard Recovery | 200 mA 200 mA | 500 ns | 150 °C | -55 °C | 10 µA | Automotive | AEC-Q101 | 30 pF | 3-PowerDFN TO-277 | Surface Mount |