Catalog
NPN power Darlington transistor
Description
AI
The devices are manufactured in planar base island technology with monolithic Darlington configuration.
NPN power Darlington transistor
NPN power Darlington transistor
| Part | Mounting Type | DC Current Gain (hFE) (Min) @ Ic, Vce [Min] | Supplier Device Package | Current - Collector Cutoff (Max) [Max] | Operating Temperature | Current - Collector (Ic) (Max) [Max] | Package / Case | Voltage - Collector Emitter Breakdown (Max) | Power - Max [Max] | Vce Saturation (Max) @ Ib, Ic [Max] |
|---|---|---|---|---|---|---|---|---|---|---|
STMicroelectronics BD677A | Through Hole | 750 | SOT-32-3 | 500 çA | 150 °C | 4 A | TO-126-3, TO-225AA | 60 V | 40 W | 2.8 V |
STMicroelectronics BD677A | ||||||||||
STMicroelectronics BD677 | ||||||||||
STMicroelectronics BD677 | ||||||||||
STMicroelectronics BD677 | ||||||||||
STMicroelectronics BD677 |