NPNX2 BRT Q1BSR10KOHM Q1BER10KOH
| Part | Resistor - Emitter Base (R2) | Power - Max [Max] | Vce Saturation (Max) @ Ib, Ic | Voltage - Collector Emitter Breakdown (Max) [Max] | Current - Collector Cutoff (Max) [Max] | Transistor Type | Mounting Type | Package / Case | DC Current Gain (hFE) (Min) @ Ic, Vce [Min] | Current - Collector (Ic) (Max) [Max] | Supplier Device Package | Frequency - Transition |
|---|---|---|---|---|---|---|---|---|---|---|---|---|
Toshiba Semiconductor and Storage | 10 kOhms | 200 mW | 300 mV | 50 V | 500 nA | 2 NPN - Pre-Biased (Dual) | Surface Mount | 5-TSSOP SC-70-5 SOT-353 | 50 | 100 mA | USV | 250 MHz |
Toshiba Semiconductor and Storage | 10 kOhms | 100 mW | 300 mV | 50 V | 100 nA | 2 NPN - Pre-Biased (Dual) (Emitter Coupled) | Surface Mount | SOT-553 | 50 | 100 mA | ESV | 250 MHz |