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20 V, P-channel Trench MOSFET
Description
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P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
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20 V, P-channel Trench MOSFET
20 V, P-channel Trench MOSFET
| Part | Vgs (Max) | Gate Charge (Max) | Vgs(th) (Max) | Package Name | Current - Continuous Drain (Id) (Ta) | Power Dissipation (Max) | Drain to Source Voltage (Vdss) | Input Capacitance (Ciss) (Max) | FET Type | Package / Case | Technology | Rds On (Max) | Mounting Type | Operating Temperature (Min) | Operating Temperature (Max) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Nexperia USA Inc. | 8 V | 2.1 nC | 950 mV | DFN1006B-3 | 500 mA | 2.7 W 360 mW | 20 V | 43 pF | P-Channel | 3-XFDFN | MOSFET (Metal Oxide) | 1.4 Ohm | Surface Mount | -55 °C | 150 °C |