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20 V, P-channel Trench MOSFET
Description
AI
P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
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20 V, P-channel Trench MOSFET
20 V, P-channel Trench MOSFET
| Part | Input Capacitance (Ciss) (Max) | Package Name | Mounting Type | Current - Continuous Drain (Id) (Ta) | FET Type | Operating Temperature (Min) | Operating Temperature (Max) | Package / Case | Drain to Source Voltage (Vdss) | Vgs(th) (Max) | Vgs (Max) | Drive Voltage (Min Rds On) | Drive Voltage (Max Rds On) | Rds On (Max) | Technology | Gate Charge (Max) | Power Dissipation (Max) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Nexperia USA Inc. | 458 pF | TO-236AB | Surface Mount | 2.1 A | P-Channel | -55 °C | 150 °C | SC-59 SOT-23-3 TO-236-3 | 20 V | 1 V | 8 V | 4.5 V | 1.8 V | 70 mOhm | MOSFET (Metal Oxide) | 8.7 nC | 2.1 W 340 mW |