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30 V, N-channel Trench MOSFET
Description
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N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
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30 V, N-channel Trench MOSFET
30 V, N-channel Trench MOSFET
| Part | Vgs(th) (Max) | Drain to Source Voltage (Vdss) | Gate Charge (Max) | Input Capacitance (Ciss) (Max) | Current - Continuous Drain (Id) (Ta) | FET Type | Mounting Type | Technology | Package / Case | Operating Temperature (Min) | Operating Temperature (Max) | Package Name | Qualification | Drive Voltage (Min Rds On) | Drive Voltage (Max Rds On) | Grade | Vgs (Max) | Rds On (Max) | Power Dissipation (Max) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Nexperia USA Inc. | 2.5 V | 30 V | 3.3 nC | 100 pF | 3.2 A | N-Channel | Surface Mount | MOSFET (Metal Oxide) | SC-59 SOT-23-3 TO-236-3 | -55 °C | 175 °C | TO-236AB | AEC-Q101 | 10 V | 4.5 V | Automotive | 20 V | 70 mOhm | 5.7 W 630 mW |