IMW120RXM1H Series
Manufacturer: INFINEON
Beta
⌘K
SILICON CARBIDE MOSFET, SINGLE, N CHANNEL, 19 A, 1.2 KV, 0.14 OHM, TO-247
| Part | Current - Continuous Drain (Id) (Tc) | Input Capacitance (Ciss) (Max) | Drain to Source Voltage (Vdss) | Vgs (Max) Positive | Vgs (Max) Negative | Package Name | Operating Temperature (Min) | Operating Temperature (Max) | Vgs(th) (Max) | Power Dissipation (Max) | Drive Voltage (Min Rds On) | Drive Voltage (Max Rds On) | Rds On (Max) | Package / Case | Mounting Type | FET Type | Gate Charge (Max) | Technology |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 INFINEON | 19 A | 454 pF | 1200 V | 23 V | -7 V | PG-TO247-3-41 | -55 °C | 175 °C | 5.7 V | 94 W | 18 V | 15 V | 182 mOhm | TO-247-3 | Through Hole | N-Channel | 13 nC 13 nC 13 nC | SiCFET (Silicon Carbide) |
 INFINEON | 13 A | 289 pF | 1200 V | 23 V | -7 V | PG-TO247-3-41 | -55 °C | 175 °C | 5.7 V | 75 W | 18 V | 15 V | 286 mOhm | TO-247-3 | Through Hole | N-Channel | 8.5 nC 8.5 nC | SiCFET (Silicon Carbide) |