Complementary Pair Enhancement Mode MOSFET
Complementary Pair Enhancement Mode MOSFET
| Part | Package / Case | Input Capacitance (Ciss) (Max) @ Vds | Configuration | Mounting Type | Gate Charge (Qg) (Max) @ Vgs | Supplier Device Package | Rds On (Max) @ Id, Vgs | FET Feature | Drain to Source Voltage (Vdss) | Power - Max [Max] | Operating Temperature [Min] | Operating Temperature [Max] | Current - Continuous Drain (Id) @ 25°C [Max] | Current - Continuous Drain (Id) @ 25°C [Min] | Vgs(th) (Max) @ Id | Technology |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Diodes Inc | SOT-23-6 | 60.67 pF | N and P-Channel | Surface Mount | 0.74 nC | SOT-26 | 400 mOhm | Logic Level Gate | 20 V | 1.12 W | -55 °C | 150 °C | 1.34 A | 1.14 A | 1 V | MOSFET (Metal Oxide) |