Catalog
30 V, 2 A NPN/NPN low VCEsat transistor
Description
AI
NPN/NPN low VCEsatBreakthrough In Small Signal (BISS) transistor in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package.
Beta
⌘K
30 V, 2 A NPN/NPN low VCEsat transistor
30 V, 2 A NPN/NPN low VCEsat transistor
| Part | DC Current Gain (hFE) (Min) | Package / Case | NPN Count | Transistor Type | Qualification | Vce Saturation (Max) | Current - Collector (Ic) (Max) | Current - Collector Cutoff (Max) | Power - Max | Operating Temperature | Mounting Type | Grade | Voltage - Collector Emitter Breakdown (Max) | Frequency - Transition | Package Length | Package Name | Package Width |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Nexperia USA Inc. | 200 250 | 6-UDFN Exposed Pad 6-UFDFN Exposed Pad | 2 | NPN | AEC-Q100 AEC-Q101 | 290 mV 300 mV | 2 A | 100 nA | 510 mW | 150 °C | Surface Mount | Automotive | 30 V | 120 MHz | 2 mm | 6-HUSON | 2 mm |