C4D10120 Series
Manufacturer: Wolfspeed, Inc.
DIODE ARR SIC 1200V 19A TO247-3
| Part | Current - Average Rectified (Io) (per Diode) | Diode Pair Count | Diode Configuration | Reverse Recovery Time (trr) | Mounting Type | Operating Temperature - Junction (Max) | Operating Temperature - Junction (Min) | Voltage - Forward (Vf) (Max) | Voltage - DC Reverse (Vr) (Max) | Current - Reverse Leakage | Speed - Fast Recovery (Minimum) | Speed | Speed - Recovery Current | Package / Case | Package Name | Technology | Current - Average Rectified (Io) | Capacitance |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Wolfspeed, Inc. | 9 A 19 A | 1 pair | Common Cathode | 0 ns | Through Hole | 175 °C | -55 °C | 1.8 V | 1200 V | 150 µA | 500 mA | No Recovery Time | 500 mA 500 mA | TO-247-3 | TO-247-3 | SiC (Silicon Carbide) Schottky | ||
Wolfspeed, Inc. | 0 ns | Through Hole | 175 °C | -55 °C | 1.8 V | 1200 V | 250 µA | 500 mA | No Recovery Time | 500 mA 500 mA | TO-220-2 | TO-220-2 | SiC (Silicon Carbide) Schottky | 33 A | 754 pF | |||
Wolfspeed, Inc. | 0 ns | Surface Mount | 175 °C | -55 °C | 1.8 V | 1200 V | 250 µA | 500 mA | No Recovery Time | 500 mA 500 mA | DPAK (2 Leads + Tab) SC-63 TO-252-3 | TO-252-2 | SiC (Silicon Carbide) Schottky | 33 A | 754 pF | |||
Wolfspeed, Inc. | 0 ns | Through Hole | 175 °C | -55 °C | 1.8 V | 1200 V | 250 µA | 500 mA | No Recovery Time | 500 mA 500 mA | TO-247-2 | TO-247-2 | SiC (Silicon Carbide) Schottky | 31.5 A | 754 pF | |||
Wolfspeed, Inc. | 0 ns | Surface Mount | 175 °C | -55 °C | 1.8 V | 1200 V | 250 µA | 500 mA | No Recovery Time | 500 mA 500 mA | DPAK (2 Leads + Tab) SC-63 TO-252-3 | TO-252-2 | SiC (Silicon Carbide) Schottky | 33 A | 754 pF |