BUK6Q26-40P Series
Manufacturer: Nexperia USA Inc.
Catalog
Description
AI
P-channel enhancement mode Field-Effect Transistor (FET) in an MLPAK33 (SOT8002-3) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
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BUK6Q26-40P/SOT8002/MLPAK33
| Part | Power Dissipation (Max) | Rds On (Max) | Drain to Source Voltage (Vdss) | Drive Voltage (Min Rds On) | Drive Voltage (Max Rds On) | Vgs(th) (Max) | Mounting Type | Operating Temperature (Min) | Operating Temperature (Max) | Technology | Current - Continuous Drain (Id) (Tc) | Gate Charge (Max) | Grade | Qualification | Input Capacitance (Ciss) (Max) | Vgs (Max) | Package Name | FET Type | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Nexperia USA Inc. | 56 W | 26.6 mOhm | 40 V | 10 V | 4.5 V | 2.7 V | Surface Mount Wettable Flank | -55 °C | 175 °C | MOSFET (Metal Oxide) | 34 A | 34 nC | Automotive | AEC-Q101 | 1280 pF | 20 V | MLPAK33 | P-Channel | 8-PowerVDFN |