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60 V, N-channel Trench MOSFET
Description
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N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT457 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
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60 V, N-channel Trench MOSFET
60 V, N-channel Trench MOSFET
| Part | Drain to Source Voltage (Vdss) | Mounting Type | Vgs (Max) | Operating Temperature (Min) | Operating Temperature (Max) | Package / Case | FET Type | Rds On (Max) | Vgs(th) (Max) | Input Capacitance (Ciss) (Max) | Gate Charge (Max) | Package Name | Technology | Current - Continuous Drain (Id) (Ta) | Power Dissipation (Max) | Drive Voltage (Min Rds On) | Drive Voltage (Max Rds On) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Nexperia USA Inc. | 60 V | Surface Mount | 20 V | -55 °C | 175 °C | SC-74 SOT-457 | N-Channel | 60 mOhm | 2.7 V | 450 pF | 13.2 nC | 6-TSOP | MOSFET (Metal Oxide) | 3.6 A | 7.5 W 667 mW | 10 V | 4.5 V |