Beta
⌘K
IR MOSFET™ N-CHANNEL POWER MOSFET ; I2PAK TO-262 PACKAGE; 4.2 MOHM;
| Part | Gate Charge (Qg) (Max) @ Vgs [Max] | FET Type | Supplier Device Package | Input Capacitance (Ciss) (Max) @ Vds | Vgs(th) (Max) @ Id | Power Dissipation (Max) [Max] | Drive Voltage (Max Rds On, Min Rds On) | Drain to Source Voltage (Vdss) | Technology | Vgs (Max) | Mounting Type | Rds On (Max) @ Id, Vgs | Current - Continuous Drain (Id) @ 25°C | Package / Case | Operating Temperature [Min] | Operating Temperature [Max] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies | 120 nC | N-Channel | TO-262 | 4520 pF | 4 V | 230 W | 10 V | 60 V | MOSFET (Metal Oxide) | 20 V | Through Hole | 4.2 mOhm | 120 A | I2PAK TO-262-3 Long Leads TO-262AA | -55 °C | 175 ░C |