C10ET07 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
Beta
⌘K
DIODE SIL CARB 650V 10A TO220AC
| Part | Speed - Fast Recovery (Maximum) | Speed - Fast Recovery (Minimum) | Mounting Type | Current - Reverse Leakage | Voltage - Forward (Vf) (Max) | Package Name | Package / Case | Technology | Operating Temperature - Junction (Max) | Operating Temperature - Junction (Min) | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Capacitance |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Vishay General Semiconductor - Diodes Division | 500 ns | 200 mA | Through Hole | 55 µA | 1.8 V | TO-220AC | TO-220-2 | SiC (Silicon Carbide) Schottky | 175 °C | -55 °C | 650 V | 10 A | 430 pF |