IGBT 600V 10A TO-220F
| Part | Current - Collector Pulsed (Icm) | Switching Energy | Vce(on) (Max) @ Vge, Ic | Gate Charge | Supplier Device Package | Package / Case | Voltage - Collector Emitter Breakdown (Max) [Max] | Current - Collector (Ic) (Max) | Td (on/off) @ 25°C | Power - Max [Max] | Reverse Recovery Time (trr) | Mounting Type | Test Condition | Operating Temperature [Min] | Operating Temperature [Max] | Td (on/off) @ 25°C | Voltage - Collector Emitter Breakdown (Max) | Vgs (Max) | Power Dissipation (Max) [Max] | Technology | FET Type | Drain to Source Voltage (Vdss) | Drive Voltage (Max Rds On, Min Rds On) | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Input Capacitance (Ciss) (Max) @ Vds |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Alpha & Omega Semiconductor Inc. | 20 A | 40 µJ 140 µJ | 1.8 V | 9.4 nC | TO-220F | TO-220-3 Full Pack | 600 V | 23 A | 12 ns 83 ns | 31.2 W | 98 ns | Through Hole | 5 A 15 V 60 Ohm 400 V | -55 °C | 150 °C | ||||||||||||
Alpha & Omega Semiconductor Inc. | 30 A | 130 µJ 180 µJ | 2 V | 24 nC | TO-220 | TO-220-3 | 20 A | 12 ns | 30 W | 262 ns | Through Hole | 10 A 15 V 30 Ohm 400 V | -55 °C | 150 °C | 91 ns | 650 V | |||||||||||
Alpha & Omega Semiconductor Inc. | TO-220F | TO-220-3 Full Pack | Through Hole | -55 °C | 150 °C | 30 V | 50 W | MOSFET (Metal Oxide) | N-Channel | 650 V | 10 V | 4.5 V | 10 A | 1 Ohm | 1645 pF | ||||||||||||
Alpha & Omega Semiconductor Inc. | 30 A | 130 µJ 180 µJ | 2 V | 24 nC | TO-220 | TO-220-3 | 20 A | 12 ns | 30 W | 263 ns | Through Hole | 10 A 15 V 30 Ohm 400 V | -55 °C | 150 °C | 91 ns | 650 V |