BSZ0804 Series

Catalog

OPTIMOS™ PD N-CHANNEL POWER MOSFET 100 V ; PQFN 3.3 X 3.3 PACKAGE; 13.5 MOHM;

Part	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Rds On (Max) @ Id, Vgs	Input Capacitance (Ciss) (Max) @ Vds	Gate Charge (Qg) (Max) @ Vgs	Current - Continuous Drain (Id) @ 25°C	Operating Temperature [Min]	Operating Temperature [Max]	Mounting Type	Drain to Source Voltage (Vdss)	FET Type	Package / Case	Vgs (Max)	Power Dissipation (Max)	Supplier Device Package	Technology
Infineon Technologies BSZ0804LSATMA1	4.5 V 10 V	2.3 V	9.6 mOhm	2100 pF	15 nC	11 A 40 A	-55 °C	150 °C	Surface Mount	100 V	N-Channel	8-PowerTDFN	20 V	2.1 W 69 W	PG-TDSON-8 FL	MOSFET (Metal Oxide)