DMP2016UFDF Series

P-Channel Enhancement Mode MOSFET

Catalog

P-Channel Enhancement Mode MOSFET

Part	Rds On (Max) @ Id, Vgs	Operating Temperature [Min]	Operating Temperature [Max]	Package / Case	Drain to Source Voltage (Vdss)	Supplier Device Package	Vgs (Max)	Mounting Type	Input Capacitance (Ciss) (Max) @ Vds	Power Dissipation (Max) [Max]	Vgs(th) (Max) @ Id	Drive Voltage (Max Rds On, Min Rds On)	Current - Continuous Drain (Id) @ 25°C	Technology	Gate Charge (Qg) (Max) @ Vgs	FET Type
Diodes Inc DMP2016UFDF-7	15 mOhm	-55 °C	150 °C	6-UDFN Exposed Pad	20 V	U-DFN2020-6 (Type F)	8 V	Surface Mount	1710 pF	900 mW	1.1 V	1.5 V 4.5 V	9.5 A	MOSFET (Metal Oxide)	30 nC	P-Channel
Diodes Inc DMP2016UFDF-13	15 mOhm	-55 °C	150 °C	6-UDFN Exposed Pad	20 V	U-DFN2020-6 (Type F)	8 V	Surface Mount	1710 pF	900 mW	1.1 V	1.5 V 4.5 V	9.5 A	MOSFET (Metal Oxide)	30 nC	P-Channel

Catalog

P-Channel Enhancement Mode MOSFET

Key Features

• 0.6mm Profile – Ideal for Low Profile ApplicationsPCB Footprint of 4mm2

• Low Gate Threshold Voltage

• Low On-Resistance

• ESD Protected Gate

• Totally Lead-Free & Fully RoHS Compliant

• Halogen and Antimony Free. "Green" Device

• For automotive applications requiring specific change control(i.e. parts qualified to AEC-Q100/101/200, PPAP capable, andmanufactured in IATF 16949 certified facilities), pleasecontact usor your local Diodes representative.https://www.diodes.com/quality/product-definitions/

Description

This MOSFET is designed to minimize on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high efficiency power management applications.