DIODE GEN PURP 200V 5A L-FLAT
| Part | Voltage - Forward (Vf) (Max) @ If | Current - Average Rectified (Io) | Current - Reverse Leakage @ Vr | Speed | Mounting Type | Operating Temperature - Junction [Max] | Operating Temperature - Junction [Min] | Reverse Recovery Time (trr) | Supplier Device Package | Package / Case | Voltage - DC Reverse (Vr) (Max) [Max] | Technology |
|---|---|---|---|---|---|---|---|---|---|---|---|---|
Toshiba Semiconductor and Storage | 980 mV | 5 A | 10 µA | 200 mA 500 ns | Surface Mount | 150 °C | -40 °C | 35 ns | L-FLAT™ (4x5.5) | L-FLAT™ | 200 V | Standard |
Toshiba Semiconductor and Storage | 980 mV | 5 A | 10 µA | 200 mA 500 ns | Surface Mount | 150 °C | -40 °C | 35 ns | L-FLAT™ (4x5.5) | L-FLAT™ | 200 V | Standard |
Toshiba Semiconductor and Storage | 980 mV | 5 A | 10 µA | 200 mA 500 ns | Surface Mount | 150 °C | -40 °C | 35 ns | L-FLAT™ (4x5.5) | L-FLAT™ | 200 V | Standard |