Catalog
NPN power Darlington transistor
Description
AI
The devices are manufactured in planar base island technology with monolithic Darlington configuration.
NPN power Darlington transistor
| Part | DC Current Gain (hFE) (Min) | Power - Max | Current - Collector (Ic) (Max) | Transistor Type | Mounting Type | Vce Saturation (Max) | Package Name | Current - Collector Cutoff (Max) | Voltage - Collector Emitter Breakdown (Max) | Operating Temperature | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|
STMicroelectronics | 750 | 40 W | 4 A | Darlington NPN | Through Hole | 2.5 V | SOT-32-3 | 500 µA | 100 V | 150 °C | TO-126-3 TO-225AA |