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20 V, N-channel Trench MOSFET
Description
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N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
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20 V, N-channel Trench MOSFET
20 V, N-channel Trench MOSFET
| Part | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) (Ta) | Gate Charge (Max) | Input Capacitance (Ciss) (Max) | Rds On (Max) | Drive Voltage (Min Rds On) | Drive Voltage (Max Rds On) | Operating Temperature (Min) | Operating Temperature (Max) | Vgs (Max) | Package Name | Technology | Power Dissipation (Max) | FET Type | Mounting Type | Package / Case | Vgs(th) (Max) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Nexperia USA Inc. | 20 V | 2.5 A | 9 nC | 347 pF | 50 mOhm 50 mOhm | 4.5 V | 1.5 V | -55 °C | 150 °C | 8 V | TO-236AB | MOSFET (Metal Oxide) | 2.1 W 340 mW | N-Channel | Surface Mount | SC-59 SOT-23-3 TO-236-3 | 950 mV |