N-CHANNEL, MOSFET
| Part | Vgs (Max) | Rds On (Max) @ Id, Vgs [Max] | Power Dissipation (Max) [Max] | Gate Charge (Qg) (Max) @ Vgs [Max] | Input Capacitance (Ciss) (Max) @ Vds [Max] | Mounting Type | Technology | Current - Continuous Drain (Id) @ 25°C | Supplier Device Package | Package / Case | Operating Temperature | Drive Voltage (Max Rds On, Min Rds On) | Drain to Source Voltage (Vdss) | Vgs(th) (Max) @ Id | FET Type |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Harris Corporation IRF730 | 20 V | 1 Ohm | 100 W | 24 nC | 530 pF | Through Hole | MOSFET (Metal Oxide) | 5.5 A | TO-220 | TO-220-3 | 150 °C | 10 V | 400 V | 4 V | N-Channel |