MOSFET, N-CH, 60V, 43A, TO-263-3
| Part | Current - Continuous Drain (Id) @ 25°C | Technology | Drain to Source Voltage (Vdss) | Package / Case | Operating Temperature [Min] | Operating Temperature [Max] | Power Dissipation (Max) | Supplier Device Package | Mounting Type | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | FET Type | Rds On (Max) @ Id, Vgs | Vgs (Max) | Drive Voltage (Max Rds On, Min Rds On) | Input Capacitance (Ciss) (Max) @ Vds |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies | 43 A | MOSFET (Metal Oxide) | 60 V | D2PAK (2 Leads + Tab) TO-263-3 TO-263AB | -55 °C | 175 ░C | 71 W | D2PAK | Surface Mount | 4 V | 30 nC | N-Channel | 15.8 mOhm | 20 V | 10 V | 1150 pF |
Infineon Technologies | 43 A | MOSFET (Metal Oxide) | 60 V | D2PAK (2 Leads + Tab) TO-263-3 TO-263AB | -55 °C | 175 ░C | 71 W | D2PAK | Surface Mount | 4 V | 30 nC | N-Channel | 15.8 mOhm | 20 V | 10 V | 1150 pF |