DMN2991UDA Series

Dual N-Channel Enhancement Mode MOSFET

Catalog

Dual N-Channel Enhancement Mode MOSFET

Part	Gate Charge (Qg) (Max) @ Vgs [Max]	Package / Case	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Input Capacitance (Ciss) (Max) @ Vds	Configuration	Vgs(th) (Max) @ Id	Mounting Type	Rds On (Max) @ Id, Vgs [Max]	Operating Temperature [Min]	Operating Temperature [Max]	Supplier Device Package	Power Dissipation (Max)	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max)	FET Type	Power - Max [Max]
Diodes Inc DMN2991UDJ	0.35 C	SOT-963	MOSFET (Metal Oxide)	20 V	520 mA	21.5 pF	2 N-Channel (Dual)	1 V	Surface Mount	990 mOhm	-55 °C	150 °C	SOT-963
Diodes Inc DMN2991UFO-7B	0.35 nC	3-XFDFN	MOSFET (Metal Oxide)	20 V		21.5 pF		1 V	Surface Mount	990 mOhm	-55 °C	150 °C	X2-DFN0604-3	440 mW	1.5 V 4.5 V	8 V	N-Channel
Diodes Inc DMN2991UT-7	0.35 nC	SOT-523	MOSFET (Metal Oxide)	20 V	300 mA	21.5 pF		1 V	Surface Mount	3 Ohm	-55 °C	150 °C	SOT-523	280 mW	1.5 V 4.5 V	10 V	N-Channel
Diodes Inc DMN2991UDA-7B	0.35 nC	6-SMD No Lead	MOSFET (Metal Oxide)	20 V	450 mA	21.5 pF	2 N-Channel (Dual)	1 V	Surface Mount	990 mOhm	-55 °C	150 °C	X2-DFN0806-6					310 mW
Diodes Inc DMN2991UDJ-7A	0.35 nC	SOT-963	MOSFET (Metal Oxide)	20 V	520 mA	21.5 pF	2 N-Channel (Dual)	1 V	Surface Mount	990 mOhm	-55 °C	150 °C	SOT-963

Catalog

Dual N-Channel Enhancement Mode MOSFET

Key Features

• Dual N-Channel MOSFET

• Low On-Resistance

• Very Low Gate Threshold Voltage, 1.0V Max

• Low Input Capacitance  Fast Switching Speed

• Ultra-Small Surface Mount Package 1mm x 1mm

• Low Package Profile, 0.45mm Maximum Package Height

• ESD Protected Gate

• Totally Lead-Free & Fully RoHS Compliant

• Halogen and Antimony Free. "Green" Device

• For automotive applications requiring specific change control (i.e. parts qualified to AEC-Q100/101/200, PPAP capable, and manufactured in IATF 16949 certified facilities), pleasecontact usor your local Diodes representative.https://www.diodes.com/quality/product-definitions/

Description

This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high efficiency power management applications.