STW4N150 Series

N-channel 1500 V, 5 Ohm, 4 A, PowerMESH(TM) power MOSFET in TO-247

Catalog

N-channel 1500 V, 5 Ohm, 4 A, PowerMESH(TM) power MOSFET in TO-247

Part	Mounting Type	Vgs(th) (Max) @ Id	Package / Case	Operating Temperature	Rds On (Max) @ Id, Vgs	Current - Continuous Drain (Id) @ 25°C	Input Capacitance (Ciss) (Max) @ Vds	Drain to Source Voltage (Vdss)	FET Type	Drive Voltage (Max Rds On, Min Rds On)	Gate Charge (Qg) (Max) @ Vgs [Max]	Supplier Device Package	Vgs (Max)	Technology
STMicroelectronics STW4N150	Through Hole	5 V	TO-247-3	150 °C	7 Ohm	4 A	1300 pF	1500 V	N-Channel	10 V	50 nC	TO-247-3	30 V	MOSFET (Metal Oxide)

Catalog

N-channel 1500 V, 5 Ohm, 4 A, PowerMESH(TM) power MOSFET in TO-247

Description

Using the well consolidated high voltage MESH OVERLAY process, STMicroelectronics has designed an advanced family of very high voltage Power MOSFETs with outstanding performances. The strengthened layout coupled with the companys proprietary edge termination structure, gives the lowest RDS(on)per area, unrivalled gate charge and switching characteristics.