MOSFET 2N-CH 30V 9.1A/11A 8SO
| Part | Configuration | Operating Temperature [Min] | Operating Temperature [Max] | Input Capacitance (Ciss) (Max) @ Vds [Max] | FET Feature | Supplier Device Package | Current - Continuous Drain (Id) @ 25°C | Mounting Type | Rds On (Max) @ Id, Vgs [Max] | Power - Max [Max] | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs [Max] | Drain to Source Voltage (Vdss) | Technology | Package / Case | Package / Case [y] | Package / Case [x] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies | 2 N-Channel (Dual) | -55 °C | 150 °C | 850 pF | Logic Level Gate | 8-SO | 9.1 A 11 A | Surface Mount | 16.4 mOhm | 2 W | 2.35 V | 10 nC | 30 V | MOSFET (Metal Oxide) | 8-SOIC | 3.9 mm | 0.154 in |
Infineon Technologies | 2 N-Channel (Dual) | -55 °C | 150 °C | 850 pF | Logic Level Gate | 8-SO | 9.1 A 11 A | Surface Mount | 16.4 mOhm | 2 W | 2.35 V | 10 nC | 30 V | MOSFET (Metal Oxide) | 8-SOIC | 3.9 mm | 0.154 in |