650V,20A SILICON CARBIDE SCHOTTK
| Part | Technology | Supplier Device Package | Capacitance @ Vr, F | Mounting Type | Package / Case | Speed | Voltage - DC Reverse (Vr) (Max) [Max] | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - Forward (Vf) (Max) @ If | Operating Temperature - Junction [Max] | Operating Temperature - Junction [Min] | Current - Average Rectified (Io) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
ANBON SEMICONDUCTOR (INT'L) LIMITED AS3D020065A | SiC (Silicon Carbide) Schottky | TO-220-2 | 1190 pF | Through Hole | TO-220-2 | No Recovery Time | 650 V | 0 ns | 20 µA | 1.65 V | 175 ░C | -55 C | 56 A |