IPP60R190 Series

Catalog

COOLMOS™ E6 N-CHANNEL SUPERJUNCTION MOSFET 600 V ; TO-220 PACKAGE; 190 MOHM;

Part	Operating Temperature [Min]	Operating Temperature [Max]	Power Dissipation (Max) [Max]	Current - Continuous Drain (Id) @ 25°C	Gate Charge (Qg) (Max) @ Vgs [Max]	Technology	Drain to Source Voltage (Vdss)	Package / Case	Rds On (Max) @ Id, Vgs	Input Capacitance (Ciss) (Max) @ Vds [Max]	Vgs(th) (Max) @ Id [Max]	Drive Voltage (Max Rds On, Min Rds On)	FET Type	Vgs (Max)	Mounting Type	Supplier Device Package
Infineon Technologies IPP60R190E6XKSA1	-55 °C	150 °C	151 W	20.2 A	63 nC	MOSFET (Metal Oxide)	600 V	TO-220-3	190 mOhm	1400 pF	3.5 V	10 V	N-Channel	20 V	Through Hole	PG-TO220-3
Infineon Technologies IPP60R190C6XKSA1	-55 °C	150 °C	151 W	20.2 A	63 nC	MOSFET (Metal Oxide)	600 V	TO-220-3	190 mOhm	1400 pF	3.5 V	10 V	N-Channel	20 V	Through Hole	PG-TO220-3