Beta
⌘K
THE ISC009N06LM5, INFINEON'S OPTIMOS™ MOSFET IN THE SUPERSO8 PACKAGE ENABLES HIGHER POWER DENSITY IN ADDITION TO IMPROVED ROBUSTNESS.
| Part | Gate Charge (Qg) (Max) @ Vgs [Max] | Input Capacitance (Ciss) (Max) @ Vds | Drain to Source Voltage (Vdss) | Operating Temperature [Min] | Operating Temperature [Max] | Technology | Vgs(th) (Max) @ Id | FET Type | Rds On (Max) @ Id, Vgs | Vgs (Max) | Package / Case | Supplier Device Package | Mounting Type | Power Dissipation (Max) | Drive Voltage (Max Rds On, Min Rds On) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies | 209 nC | 13000 pF | 60 V | -55 °C | 175 ░C | MOSFET (Metal Oxide) | 2.3 V | N-Channel | 0.9 mOhm | 20 V | 8-PowerTDFN | PG-TSON-8-3 | Surface Mount | 3 W 214 W | 4.5 V 10 V |