1700V, 35 mOhm, Discrete mSiC™ MOSFET
1700V, 35 mOhm, Discrete mSiC™ MOSFET
| Part | Rds On (Max) | Drain to Source Voltage (Vdss) | Technology | Package / Case | Current - Continuous Drain (Id) (Tc) | Vgs (Max) Negative | Vgs (Max) Positive | Drive Voltage (Max Rds On, Min Rds On) | Vgs(th) (Max) | Power Dissipation (Max) | Gate Charge (Max) | Input Capacitance (Ciss) (Max) | Operating Temperature (Min) | Operating Temperature (Max) | Mounting Type | Package Name | FET Type |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Microchip Technology | |||||||||||||||||
 Microchip Technology | 45 mOhm | 1700 V | SiCFET (Silicon Carbide) | TO-247-4 | 68 A | -10 V | 23 V | 20 V | 3.25 V | 370 W | 178 nC | 3300 pF | -55 °C | 175 °C | Through Hole | TO-247-4 | N-Channel |
 Microchip Technology | 45 mOhm | 1700 V | SiCFET (Silicon Carbide) | D3PAK (2 Leads + Tab) TO-268-3 TO-268AA | 59 A | -10 V | 23 V | 20 V | 3.25 V | 278 W | 178 nC | 3300 pF | -55 °C | 175 °C | Surface Mount | D3PAK | N-Channel |
 Microchip Technology | 45 mOhm | 1700 V | SiCFET (Silicon Carbide) | TO-247-3 | 68 A | -10 V | 23 V | 20 V | 3.25 V | 370 W | 178 nC | 3300 pF | -60 °C | 175 °C | Through Hole | TO-247-3 | N-Channel |