Catalog
N-CHANNEL ENHANCEMENT MODE MOSFET
Key Features
• Low Qg & Qgd
• Small Footprint
• Low Profile 0.62mm height
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N-CHANNEL ENHANCEMENT MODE MOSFET
N-CHANNEL ENHANCEMENT MODE MOSFET
| Part | Input Capacitance (Ciss) (Max) @ Vds | Rds On (Max) @ Id, Vgs | Current - Continuous Drain (Id) @ 25°C | Vgs (Max) | Vgs(th) (Max) @ Id | Power Dissipation (Max) | Drive Voltage (Max Rds On, Min Rds On) | Mounting Type | Drain to Source Voltage (Vdss) | Supplier Device Package | Operating Temperature [Min] | Operating Temperature [Max] | FET Type | Technology |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Diodes Inc | 423 pF | 20 mOhm | 5.5 A | 8 V | 1 V | 920 mW | 2.5 V 4.5 V | Surface Mount | 12 V | U-WLB1510-6 | -55 °C | 150 °C | N-Channel | MOSFET (Metal Oxide) |