Beta
⌘K
AUTO AEC-Q TR NPNX2 BRT, Q1BSR=4
| Part | Vce Saturation (Max) @ Ib, Ic | Mounting Type | Frequency - Transition | DC Current Gain (hFE) (Min) @ Ic, Vce [Min] | Resistor - Emitter Base (R2) | Supplier Device Package | Current - Collector Cutoff (Max) [Max] | Power - Max [Max] | Resistor - Base (R1) | Package / Case | Voltage - Collector Emitter Breakdown (Max) [Max] | Current - Collector (Ic) (Max) [Max] | Transistor Type |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Toshiba Semiconductor and Storage | 300 mV | Surface Mount | 250 MHz | 70 | 22 kOhms | US6 | 500 nA | 200 mW | 47 kOhms | 6-TSSOP SC-88 SOT-363 | 50 V | 100 mA | 2 NPN - Pre-Biased (Dual) |