IR MOSFET™ N-CHANNEL POWER MOSFET ; D2PAK TO-263 PACKAGE; 3 MOHM;
| Part | Vgs(th) (Max) @ Id | Drive Voltage (Max Rds On, Min Rds On) | Power Dissipation (Max) [Max] | Operating Temperature [Min] | Operating Temperature [Max] | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds [Max] | Package / Case | Supplier Device Package | Mounting Type | Rds On (Max) @ Id, Vgs [Max] | FET Type | Technology | Drain to Source Voltage (Vdss) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies | 4 V | 10 V | 300 W | -55 °C | 175 ░C | 120 A | 170 nC | 20 V | 6540 pF | D2PAK (2 Leads + Tab) TO-263-3 TO-263AB | D2PAK | Surface Mount | 3 mOhm | N-Channel | MOSFET (Metal Oxide) | 60 V |