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20 V, P-channel Trench MOSFET
Description
AI
P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
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20 V, P-channel Trench MOSFET
20 V, P-channel Trench MOSFET
| Part | FET Type | Operating Temperature (Min) | Operating Temperature (Max) | Drain to Source Voltage (Vdss) | Drive Voltage (Max Rds On) | Drive Voltage (Min Rds On) | Vgs(th) (Max) | Grade | Mounting Type | Vgs (Max) | Input Capacitance (Ciss) (Max) | Gate Charge (Max) | Technology | Package / Case | Power Dissipation (Max) | Rds On (Max) | Qualification | Package Name | Current - Continuous Drain (Id) (Ta) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Nexperia USA Inc. | P-Channel | -55 °C | 175 °C | 20 V | 2.5 V | 8 V | 1.3 V | Automotive | Surface Mount | 12 V | 679 pF | 10 nC | MOSFET (Metal Oxide) | SC-59 SOT-23-3 TO-236-3 | 8.3 W 610 mW | 49 mOhm | AEC-Q101 | TO-236AB | 4 A |