BSZ014 Series
Manufacturer: INFINEON
OPTIMOS™ 5 N-CHANNEL POWER MOSFET 25 V ; PQFN 3.3 X 3.3 PACKAGE; 1.45 MOHM; MONOLITHICALLY INTEGRATED SCHOTTKY-LIKE DIODE
| Part | FET Feature | Power Dissipation (Max) | Package / Case | Vgs(th) (Max) | Input Capacitance (Ciss) (Max) | Current - Continuous Drain (Id) (Tc) | Current - Continuous Drain (Id) (Ta) | Technology | Drive Voltage (Min Rds On) | Drive Voltage (Max Rds On) | Vgs (Max) | FET Type | Drain to Source Voltage (Vdss) | Mounting Type | Rds On (Max) | Package Name | Gate Charge (Max) | Operating Temperature (Min) | Operating Temperature (Max) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
INFINEON | Schottky Diode (Body) | 2.1 W 69 W | 8-PowerTDFN | 2 V | 2300 pF | 40 A | 31 A | MOSFET (Metal Oxide) | 10 V | 4.5 V | 16 V | N-Channel | 25 V | Surface Mount | 1.45 mOhm | PG-TSDSON-8-FL | 33 nC | -55 °C | 150 °C |